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We demonstrate Purcell enhancement of a single T center integrated in a silicon photonic crystal cavity, increasing the fluorescence decay rate by a factor of 6.89 and achieving a photon outcoupling rate of 73.3 kHz. 

We investigate light-matter interactions for a single T center coupled to a silicon photonic crystal cavity. By solving Lindblad master equation, we extract the cavity-QED parameters for the coupled system. 

Abstract Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor ofF = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.